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About Tender
๐ Invitation For Bids: Mocvd Epitaxy Structure Ga N Hemt On 4" Sic Substrate ๐ The Department Of Higher Education, Ministry Of Education, Is Seeking Bids For The Supply Of Mocvd Epitaxy Structure Ga N Hemt On 4 Inch Sic Substrates. ๐ฌ๐ซ ๐ Bid Submission Deadline: April 12, 2024, 5:00 Pm Suppliers With Expertise In Advanced Semiconductor Materials Are Encouraged To Submit Detailed Bids, Including Technical Specifications, Pricing, And Delivery Schedules. Keywords: Mocvd, Epitaxy Structure, Ga N Hemt, 4" Sic Substrate, Semiconductor Materials, Government Procurement, Advanced Technology Bid| Particulars | Details |
|---|---|
| Title |
Mocvd Epitaxy Structure Ga N Hemt On 4" Sic Substrate
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| Description |
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| Organisation | Department of Higher Education | Ministry of Education |
| Tender Id | GEM/2024/B/4812015 |
|
Reference Number |
- |
| Tender Fee | - |
| EMD | - |
| Tender Value | - |
| Place | |
| Link |
View Original Tender Notice
https://bidplus.gem.gov.in/all-bids |
| Start Date | March 22, 2024 22:09 |
| End Date |
Expired
12/04/2024
Expired 914 days ago |
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Award of Contract & Bid Results
Technical Evaluation Results
| S.No. | Seller Name | Offered Item | Participated On | MSE/MII Status | Status |
|---|---|---|---|---|---|
| 1 | Matrix Technologies Automation | Make : NA Model : unbranded Title : unbranded | 31-03-2024 15:51:46 | MII | Disqualified |
| 2 | Semicon Electronics Technologies | Make : NA Model : MOCVD Epitaxy Structure GaN HEMT On 4" SIC Substra Title : MOCVD Epitaxy Structure GaN HEMT On 4" SIC Substrate | 27-03-2024 12:17:12 | MII | Qualified |
| 3 | Wafer India Enterprises | Make : MOCVD Epitaxy Structure GaN HEMT Model : MOCVD Epitaxy Structure GaN HEMT On 4" SIC Substra Title : MOCVD Epitaxy Structure GaN HEMT On 4" SIC Substrate | 15-04-2024 14:44:46 | MII | Disqualified |
Financial Evaluation Results
| S.No. | Seller Name | Offered Item | Total Price | Rank |
|---|---|---|---|---|
| 1 | Semicon Electronics Technologies | Item Categories : MOCVD epitaxy structure GaN HEMT on 4" SIC substrate | 2400000.00 | L1 |
Amplifier, p/n: cmpa206003 5f, 35 w 2.0 - 6.0 ghz 28v gan mmic power,amplifier, p/n: cghv50200f- amp, 4.4-5.0ghz, gan hemt is included,amplifier, p/n: cghv50200f, 200w, gan hemt, 50v, 4.4-5.0ghz, im fet, flange,amplifier, p/n: cmpa2060035f-amp2, 2-6 ghz -amp2
Amplifier, p/n: cmpa206003 5f, 35 w 2.0 - 6.0 ghz 28v gan mmic power,amplifier, p/n: cghv50200f- amp, 4.4-5.0ghz, gan hemt is included,amplifier, p/n: cghv50200f, 200w, gan hemt, 50v, 4.4-5.0ghz, im fet, flange,amplifier, p/n: cmpa2060035f-amp2, 2-6 ghz -amp2
Read moreSemiconductor wafer i.e. gan/algan hemt structure on 4-inch diameter sic
Semiconductor wafer i.e. gan/algan hemt structure on 4-inch diameter sic
Read moreSemiconductor wafer i.e. gan/algan hemt structure on 4-inch diameter sic
Semiconductor wafer i.e. gan/algan hemt structure on 4-inch diameter sic.
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